View IDH02SG120_5026059.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IDH02SG120
3rd Generation thinQ!TM SiC Schottky Diode
Features * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery / No forward recovery * Temperature independent switching behavior * High surge current capability * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Optimized for high temperature operation * Lowest Figure of Merit QC/IF PG-TO220-2 Product Summary V DC QC I F; T C< 130 C 1200 600 3.2 7.2 3 2 V nC A
thinQ!TM 3G Diode designed for fast switching applications like: * SMPS e.g.; CCM PFC * Motor Drives; Solar Applications; UPS Type IDH02SG120 Package PG-TO220-2 Marking D02G120 Pin 1 C Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 C T C=25 C, t p=10 ms T C=150 C, t p=10 ms T C=25 C, t p=10 s T C=25 C, t p=10 ms T C=150 C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and M3.5 screws page 1 T j=25 C VR= 0....960 V T C=25 C Value 2 15 13 90 1.4 1.1 1200 50 75 -55 ... 175 260 60 Ncm 2009-09-04 V V/ns W C A2s Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque Rev. 2.0 I F,max i 2dt
IDH02SG120
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA Thermal resistance, junction- ambient, leaded 2 62 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 C, unless otherwise specified
Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 mA, T j=25 C I F=2 A, T j=25 C I F=2 A, T j=150 C Reverse current IR V R=1200 V, T j=25 C V R=1200 V, T j=150 C AC characteristics Total capacitive charge Switching time2) Total capacitance Qc tc C V R=400 V,I FI F,max, di F/dt =200 A/s, T j=150 C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 7.2 125 12 10 <10 nC ns pF 1200 1.65 2.55 2 8 1.8 48 400 A V
1) 2)
J-STD20 and JESD22
t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from t rr which is dependent on T j, ILOAD and di/dt. No reverse recovery time constant t rr due to absence of minority carrier inje
3) 4)
Under worst case Zth conditions. Only capacitive charge occuring, guaranteed by design page 2 2009-09-04
Rev. 2.0
IDH02SG120
1 Power dissipation P tot=f(T C) 2 Diode forward current I F=f(T C)3); T j175 C; parameter: D = t p/T
80
45
0.1
70
40 35 30
60
50
P tot [W]
I F [A]
25 20 15
0.3
40
0.5 0.7 1
30
20
10 5 0 25 75 125 175 25 75 125 175
10
0
T C [C]
T C [C]
3 Typ. forward characteristic I F=f(V F); t p=400 s parameter: T j
8
4 Typ. Reverse current vs. reverse voltage EC=f(VR)
102
-55 C
101
150 C 175 C
6
25 C 100 C
100 4
I R [A]
10-1
I F [A]
175 C 150 C
2 10-2
100 C 25 C -55 C
0 0 2 4 6 8
10
-3
200
400
600
800
1000
1200
V SD [V]
V R [V]
Rev. 2.0
page 3
2009-09-04
IDH02SG120
5 Typ. capacitance charge vs. current slope Q C=f(di F/dt ) ; T j=150 C; I FI F,max
4)
6 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
8
101
6 100
0.5
Z thJC [K/W]
Q C [nC]
0.2 0.1
4
10-1 2
0.05
0.02
0
0 100 400 700 1000
10-2 10-5 10-4 10-3 10-2 10-1
di F/dt [A/s ]
t [s]
7 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 C, f =1 MHz
8 Typ. C stored energy E C=f(V R)
125
2
100 1.5
75
E c [C]
50 25 0 1 10 100 1000
C [pF]
1
0.5
0 0 100 200 300 400 500 600
V R [V]
V R [V]
Rev. 2.0
page 4
2009-09-04
IDH02SG120
PG-TO220-2: Outline
Dimensions in mm/inches Rev. 2.0 page 5 2009-09-04
IDH02SG120
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2009-08-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 6
2009-09-04

▲Up To Search▲

Price & Availability of IDH02SG120

	To Download IDH02SG120 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .